RelMicroS Reliability Models

Modeling different degradation processes is crucial to estimate the lifetime of VLSI circuits. Furthermore, accurate models assist in taking the proper actions to alleviate degradation effects.

RelMicroS offers miscellaneous degradation models for the leadingedge nodes to precisely compute the negative impact of degradation processes on circuit reliability allowing customers to deliver reliable microelectronic systems. 


Degradation Models:

  • Negative Bias Temperature Instability (NBTI).
  • Positive Bias Temperature Instability (PBTI).
  • Hot carrier injection (HCI).
  • Time Dependent Dielectric Breakdown (TDDB).
  • Electromigration (EM).


Technology Nodes:

16nm, 20nm, 28nm, 40nm, 45nm, 55nm, and 65nm